Features of a Gunn Diode
A gunn diode is made up of only N-type semiconductor which is typically sandwiched between two metal conductors. The central section is usually lightly doped N– surrounded by heavily doped N+ layers. The … Read more
A gunn diode is made up of only N-type semiconductor which is typically sandwiched between two metal conductors. The central section is usually lightly doped N– surrounded by heavily doped N+ layers. The … Read more
PIN diode is characterized by fast low capacitance switching. A PIN diode is fabricated in a similar fashion to a silicon switching diode with an intrinsic region added between the PN junction layers. This generates a thicker depletion region, the … Read more
The operation of a typical AM audio frequency signal is illustrated in the Figure 1.0 where vin is the modulated signal that is shown Figure 1.1.
A typical amplitude modulated signal that is fed … Read more
Schottky diode is fabricated as a metal-to-N junction rather than a P-N semiconductor junction. Also referred to as hot-carrier diodes, Schottky diodes are characterized by fast switching times (low reverse-recovery time), low forward voltage drop (normally 0.25 to 0.4 … Read more
Laser diodes are PN junction devices under a forward bias. LASER is an acronym for Light Amplification by Stimulated Emission of Radiation.
The laser diode structure can be divided into two categories:… Read more
The Impact Avalanche Transit Time (IMPATT) diode is a high power radio frequency (RF) generator that operates from 3 to 100 GHz. IMPATT diodes are manufactured from silicon, gallium arsenide or silicon carbide.
An IMPATT diode is reverse biased above … Read more
Diodes are used in many applications for example diodes are employed in reverse-polarity protection, used in voltage regulators, etc. We discuss these applications plus more in this article.
Here are some of the different applications of diodes:
A diode is a device that allows current to flow only in one direction. It is made from p-type or n-type semiconductors joined together. It has a depletion layer/p-n junction/potential barrier.