Features of a Gunn Diode
A gunn diode is made up of only N-type semiconductor which is typically sandwiched between two metal conductors. The central section is usually lightly doped N– surrounded by heavily doped N+ layers. The … Read more
Analogue and Digital Electronics. Areas covered in Analogue and Digital Electronics include: Amplifiers, Logic gates, Transistors, Multiplexers, Decoders, Counters, Registers, etc.
A gunn diode is made up of only N-type semiconductor which is typically sandwiched between two metal conductors. The central section is usually lightly doped N– surrounded by heavily doped N+ layers. The … Read more
Aluminium is among the most important metals on earth. It’s used in various industries and applications, including aircraft parts, furniture, and sporting equipment. However, did you know it’s also used to create aluminium substrate PCBs – one of the most … Read more
A voltage multiplier is a specialized rectifier circuit capable of producing dc output voltage which is theoretically an integer times the AC peak input, for instance, it is possible to get 200 VDC from a 100 Vpeak AC source … Read more
A clamper circuit or dc restorer is used to clamp a peak of a waveform to a specific DC level compared with a capacitive coupled signal which swings about its average DC level (normally 0 V). If the diode is … Read more
A clipper also referred to as a limiter is a circuit which removes the peak of a waveform. A clipper consists of diodes, resistors and sometimes DC sources to clip or limit the output to a certain level.
The input-output … Read more
Linear ICs (LICs) also referred to as analog ICs are characterized by inputs and outputs that can take a continuous range of values. In addition, the outputs are generally proportional to the inputs. On the other hand, Digital ICs contain … Read more
PIN diode is characterized by fast low capacitance switching. A PIN diode is fabricated in a similar fashion to a silicon switching diode with an intrinsic region added between the PN junction layers. This generates a thicker depletion region, the … Read more
Schottky diode is fabricated as a metal-to-N junction rather than a P-N semiconductor junction. Also referred to as hot-carrier diodes, Schottky diodes are characterized by fast switching times (low reverse-recovery time), low forward voltage drop (normally 0.25 to 0.4 … Read more
The Impact Avalanche Transit Time (IMPATT) diode is a high power radio frequency (RF) generator that operates from 3 to 100 GHz. IMPATT diodes are manufactured from silicon, gallium arsenide or silicon carbide.
An IMPATT diode is reverse biased above … Read more